| PART |
Description |
Maker |
| BGT24AT2 |
Silicon Germanium 24 GHz Transmitter MMIC
|
Infineon Technologies A...
|
| BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies
|
| UPC3242TB-E3-A UPC3240TB |
3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER
|
Renesas Electronics Corporation
|
| SGA-3586 SGA-3586Z |
DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier
|
SIRENZA MICRODEVICES
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| BGA61208 |
Silicon Germanium Broadband MMIC Amplifier
0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| BFR740L3 |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
